Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

Metal-oxide-semiconductor field-effect transistors (MOSFETs) undergo fatigue degradation under high thermal and electrical stresses. This process results in changes in their parasitic parameters, which can be detected using frequency domain reflectometry (FDR). Frequency domain impedance analysis is employed to characterize the various...

Bonding Process of Copper Foam-Silver Composite and Performance Characterization of the Joint

As a key heat-dissipating and electrical interconnecting component in high-temperature power modules, die-attach and substrate-attach layers play an important role in effectively reducing the thermal resistance and improving the long-term reliability. Traditional substrate-attach materials limit the high-temperature applications of packaging...

The Mechanical Properties and Elastic Anisotropy of η’-Cu6Sn5 and Cu3Sn Intermetallic Compounds

Full intermetallic compound (IMC) solder joints present fascinating advantages in high-temperature applications. In this study, the mechanical properties and elastic anisotropy of η’-Cu6Sn5 and Cu3Sn intermetallic compounds were investigated using first-principles calculations. The values of single-crystal elastic constants, the elastic (E),...

First principles study of gas molecules adsorption on monolayered β-SnSe

For the purpose of exploring the application of two-dimensional (2D) material in the field of gas sensors, the adsorption properties of gas molecules, CO, CO₂, CH₂O, O₂, NO₂, and SO2 on the surface of monolayered tin selenium in β phase (β-SnSe) has been researched by first principles calculation...

The effects of graphene stacking on the performance of methane sensor: A first-principles study on the adsorption, band gap and doping of graphene

The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P) via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has...