Tunable Photodetectors via In Situ Thermal Conversion of TiS₃ to TiO₂

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled...

Thickness-Dependent Refractive Index of 1L, 2L, and 3L MoS ₂ , MoSe ₂ , WS ₂ , and WSe ₂

An interesting aspect of 2D materials is the change of their electronic structure with the reduction of thickness. Molybdenum and tungsten-based transition metal dichalcogenides form an important family of 2D materials, whose members show a thickness-dependent bandgap and strong light–matter interaction. In this work, the experimental...

High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...