Lauth, J.D. (author), Kulkarni, A. (author), Spoor, F.C.M. (author), Renaud, N. (author), Grozema, F.C. (author), Houtepen, A.J. (author), Schins, J.M. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author) The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We...
journal article 2016
