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Shi, L. (author), Nihtianov, S. (author), Scholze, F. (author), Gottwald, A. (author), Nanver, L.K. (author)In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron-layer coverage of the anode surface, PureB...conference paper 2011
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Shi, L. (author), Sarubbi, F. (author), Nanver, L.K. (author), Kroth, U. (author), Gottwald, A. (author), Nihtianov, S. (author)In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we...journal article 2010