Implementation of a New Bank Erosion Model in Delft3D

Bank erosion plays an important role in the hydro-morphodynamics and evolution of natural rivers. Therefore, it is essential to have a reliable bank erosion model for accurate simulation of hydro-morphodynamic processes. We developed and successfully implemented a new, feasible bank erosion model in Delft3D software. The developed model...

Development of a multi rotor floating offshore system based on vertical axis wind turbines

The upscaling of wind turbines results in fewer units per installed MW reducing infrastructure and maintenance costs of offshore wind farms. Multi rotor systems (MRS), comprising many wind turbine rotors on a single support structure, are potentially a means to maximize the upscaling benefit in achieving larger unit capacities than is...

Operation and Maintenance Modelling for Multi Rotor Systems: Bottlenecks in Operations

As the installed capacity of individual turbines increases, so do costs associated with manufacture and maintenance. One proposed solution to this problem is the Multi-Rotor System (MRS) which utilises many small rotors to yield the same energy capture as a single large turbine. The operational advantage of the MRS is the built in redundancy...

Future emerging technologies in the wind power sector: A European perspective

This paper represents an expert view from Europe of future emerging technologies within the wind energy sector considering their potential, challenges, applications and technology readiness and how they might evolve in the coming years. These technologies were identified as originating primarily from the academic sector, some start-up...

Coherent control via weak measurements in P 31 single-atom electron and nuclear spin qubits

The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and nuclear spin states of a P31 single-atom donor in silicon. We first show how the partial...

Single Ion Implantation into Si-Based Devices

Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...

Single Dopant Implantation into a Nanoscale MOSFET Devices

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...