Raman Fingerprint of Pressure-Induced Phase Transitions in TiS₃Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide ...

Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS₃) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...