High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron-layer coverage of the anode surface, PureB...