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Hsiao, T. (author), Cova Fariña, P. (author), Oosterhout, S.D. (author), Jirovec, D. (author), Zhang, X. (author), van Diepen, C.J. (author), Lawrie, W.I.L. (author), Wang, C.A. (author), Sammak, A. (author), Scappucci, G. (author), Veldhorst, M. (author), Vandersypen, L.M.K. (author)
Quantum systems with engineered Hamiltonians can be used to study many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for realizing generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter...
journal article 2024
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Petit, L. (author), Russ, M.F. (author), Eenink, H.G.J. (author), Lawrie, W.I.L. (author), Clarke, James S. (author), Vandersypen, L.M.K. (author), Veldhorst, M. (author)
Spin qubits in quantum dots define an attractive platform for quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate above one Kelvin. However, despite demonstrations of SWAP oscillations, the integration of this two-qubit gate together with single-qubit...
journal article 2022
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Philips, S.G.J. (author), Madzik, M.T. (author), Amitonov, S. (author), de Snoo, S.L. (author), Russ, M.F. (author), Kalhor, N. (author), Volk, C.A. (author), Lawrie, W.I.L. (author), Brousse, D. (author), Tryputen, L. (author), Paquelet Wuetz, B. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author), Vandersypen, L.M.K. (author)
Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably1. However, the requirements of having a large qubit count and operating with high fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise2,3 but demonstrations so far use...
journal article 2022
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Lodari, M. (author), Hendrickx, N.W. (author), Lawrie, W.I.L. (author), Hsiao, T. (author), Vandersypen, L.M.K. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author)
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very...
journal article 2021
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Lawrie, W.I.L. (author), Eenink, H.G.J. (author), Hendrickx, N.W. (author), Boter, J.M. (author), Petit, L. (author), Amitonov, S. (author), Lodari, M. (author), Paquelet Wuetz, B. (author), Volk, C.A. (author), Philips, S.G.J. (author), Droulers, G. (author), Kalhor, N. (author), van Riggelen, F. (author), Brousse, D. (author), Sammak, A. (author), Vandersypen, L.M.K. (author), Scappucci, G. (author), Veldhorst, M. (author)
Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we...
review 2020
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Eenink, H.G.J. (author), Petit, L. (author), Lawrie, W.I.L. (author), Clarke, J. S. (author), Vandersypen, L.M.K. (author), Veldhorst, M. (author)
Extremely long coherence times, excellent single-qubit gate fidelities, and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel...
journal article 2019
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