Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact...

Modeling oxidation induced crack healing in non-oxide ceramics and metallo-ceramics (abstract)