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Hou, F. (author), Wang, W. (author), Cao, Liqiang (author), Li, Jun (author), Su, Meiying (author), Lin, Tingyu (author), Zhang, Kouchi (author), Ferreira, Jan Abraham (author)
SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance...
review 2020
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Hou, F. (author), Wang, Qidong (author), Chen, Min (author), Zhang, Kouchi (author), Ferreira, Jan Abraham (author), Wang, Wenbo (author), Ma, R. (author), Su, Meiying (author), Song, Yang (author)
In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100...
journal article 2020