Slow Electron-Phonon Cooling in Superconducting Diamond Films

We have measured the electron-phonon energy-relaxation time, τ_eph, in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T^-2-dependence. The data are consistent with the...

Relaxation of the resistive superconducting state in boron-doped diamond films

We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm?3 and a critical temperature of about 2K...

The electron-phonon relaxation time in thin superconducting titanium nitride films

We report on the direct measurement of the electron-phonon relaxation time, ?eph, in disordered TiN films. Measured values of ?eph are from 5.5?ns to 88?ns in the 4.2 to 1.7?K temperature range and consistent with a T?3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters....

Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140?GHz radiation....