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Liu, Sijie (author), Xin, Jingmin (author), Wu, Jiayi (author), Deng, Yangyang (author), Su, Ruisheng (author), Niessen, W.J. (author), Zheng, Nanning (author), van Walsum, T. (author)
Identification and detection of thin-cap fibroatheroma (TCFA) from intravascular optical coherence tomography (IVOCT) images is critical for treatment of coronary heart diseases. Recently, deep learning methods have shown promising successes in TCFA identification. However, most methods usually do not effectively utilize multi-view...
journal article 2023
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Sun, Y. (author), Kang, Xuanwu (author), Deng, Shixiong (author), Zheng, Yingkui (author), Wei, Ke (author), Xu, Linwang (author), Wu, Hao (author), Liu, Xinyu (author)
Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a...
journal article 2021
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Kang, Xuanwu (author), Sun, Y. (author), Zheng, Yingkui (author), Wei, Ke (author), Wu, Hao (author), Zhao, Yuanyuan (author), Liu, Xinyu (author), Zhang, Kouchi (author)
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON...
journal article 2021
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Sun, Y. (author), Kang, Xuanwu (author), Deng, Shixiong (author), Zheng, Yingkui (author), Wei, Ke (author), Xu, Linwang (author), Wu, Hao (author), Liu, Xinyu (author)
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...
journal article 2021
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Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...
review 2019
document
Liu, Yang (author), Wu, Yuanhao (author), Bian, Dong (author), Gao, Shuang (author), Leeflang, M.A. (author), Guo, Hui (author), Zheng, Yufeng (author), Zhou, J. (author)
Novel Mg-(3.5, 6.5wt%)Li-(0.5, 2, 4wt%)Zn ternary alloys were developed as new kinds of biodegradable metallic materials with potential for stent application. Their mechanical properties, degradation behavior, cytocompatibility and hemocompatibility were studied. These potential biomaterials showed higher ultimate tensile strength than...
journal article 2017
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