Glassy behavior of a two-dimensional electron system in Si in parallel magnetic fields

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density ng and nc, the critical density for the MIT, increase with B such that...

Magnetic-Field Dependence of the Anomalous Noise Behavior in a Two-Dimensional Electron System in Silicon

Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers