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Baeva, E. M. (author), Sidorova, M. V. (author), Korneev, A. A. (author), Smirnov, K. V. (author), Divochy, A. V. (author), Morozov, P. V. (author), Zolotov, P. I. (author), Vakhtomin, Yu B. (author), Klapwijk, T.M. (author)We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of...journal article 2018
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Titova, Nadezhda (author), Kardakova, Anna I. (author), Tovpeko, Nina (author), Ryabchun, Sergey (author), Mandal, Soumen (author), Morozov, Dmitry (author), Klemencic, Georgina M. (author), Giblin, Sean R. (author), Williams, Oliver A. (author), Goltsman, Gregory N. (author), Klapwijk, T.M. (author)We have measured the electron-phonon energy-relaxation time, τ<sub>eph</sub>, in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T<sup>-2</sup>-dependence. The data are consistent with the...journal article 2017
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Kardakova, A. (author), Finkel, M. (author), Morozov, D. (author), Kovalyuk, V. (author), An, P. (author), Dunscombe, C. (author), Tarkhov, M. (author), Mauskopf, P. (author), Klapwijk, T.M. (author), Goltsman, G. (author)We report on the direct measurement of the electron-phonon relaxation time, ?eph, in disordered TiN films. Measured values of ?eph are from 5.5?ns to 88?ns in the 4.2 to 1.7?K temperature range and consistent with a T?3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters....journal article 2013
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Fedorov, G. (author), Kardakova, A. (author), Gayduchenko, I. (author), Charayev, I. (author), Voronov, B.M. (author), Finkel, M. (author), Klapwijk, T.M. (author), Morozov, S. (author), Presniakov, M. (author), Bobrinetskiy, I. (author), Ibragimov, R. (author), Goltsman, G. (author)We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140?GHz radiation....journal article 2013