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Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layersMohammadi, V. (author), Nihtianov, S. (author)The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...journal article 2016
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...journal article 2012