Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h??<?2Eg and h??>?2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...

Formation of nanopores in a SiN/SiO2 membrane with an electron beam

An electron beam can drill nanopores in SiO2 or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40?nm thick silicon nitride?SiO2 bilayer using an electron beam with a diameter of 8?nm (full width of half height) was investigated by electron...