High-frequency noise modeling of Si(Ge) bipolar transistors

The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency (RF) and optoelectronic transmission systems,...

A combined BEM/FEM method for IC substrate modeling

The research presented in this thesis was done in the context of the modeling of parasitic physical effects, like field couplings and crosstalk, that may adversely affect the functional performance of Integrated Circuits (ICs). The modeling of parasitic effects, through simulations with the resulting models, provides insight into the performance...