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Spin polarization of two-dimensional electrons determined from Shubnikov¿de Haas oscillations as a function of angle

Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field

Mertes, K.M. (author), Zheng, H. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Delft als onderzoeksuniversiteit

Klapwijk, T.M. (author)

public lecture 2001

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Direct demonstration of circulating currents in a controllable µ-SQUID generated by a 0 to µ transition of the weak links

Baselmans, J.J.A. (author), Wees, B.J. (author), Klapwijk, T.M. (author)

journal article 2002

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Spin polarization of strongly interacting two-dimensional electrons: The role of disorder

Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2002

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Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system

Shashkin, A.A. (author), Kravchenko, S.V. (author), Dolgopolov, V.T. (author), Klapwijk, T.M. (author)

journal article 2002

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One-dimensional ring in the presence of Rashba spin-orbit interaction: Derivation of the correct Hamiltonian

Meijer, F.E. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author)

journal article 2002

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Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Jaroszynki, J. (author), Popovic, D. (author), Klapwijk, T.M. (author)

journal article 2002

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Direct observation of the transition from the conventional superconducting state to the ¿ state in a controllable Josephson Junction

Baselmans, J.J.A. (author), Heikkilä, T.T. (author), van Wees, J.B. (author), Klapwijk, T.M. (author)

journal article 2002

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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)

We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...

journal article 2002

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Switch-on voltage in disordered organic field-effect transistors

Meijer, E.J. (author), Tanase, C. (author), Blom, P.W.M. (author), Van Veenendaal, E. (author), Huisman, B.H. (author), De Leeuw, D.M. (author), Klapwijk, T.M. (author)

The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate...

journal article 2002

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Scaling of nano-Schottky-diodes

Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)

A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...

journal article 2002

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Gate-induced ionization of single dopant atoms

Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)

journal article 2003

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Texture-related roughness of (Nb,Ti)N sputter-deposited films

Iosad, N.N. (author), van der Pers, N.M. (author), Grachev, S. (author), Zuiddam, M. (author), Jackson, B.D. (author), Dmitriev, P.N. (author), Klapwijk, T.M. (author)

journal article 2003

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Analysis of the fabrication process of Nb/Al-AlN/sub x//Nb tunnel junctions with low R/sub n/A values for SIS mixers

Iosad, N.N. (author), Kroug, M. (author), Zijlstra, T. (author), Ermakov, A.B. (author), Jackson, B.D. (author), Zuiddam, M. (author), Meijer, F.E. (author), Klapwijk, T.M. (author)

journal article 2003

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Single domain transport measurements of C60 films

Rogge, S. (author), Durkut, M. (author), Klapwijk, T.M. (author)

journal article 2003

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Coherent Backscattering near the Two-Dimensional Metal-Insulator Transition

Rahimi, M. (author), Anissimova, S. (author), Sakr, M.R. (author), Kravchenko, S.V. (author), Klapwijk, T.M. (author)

journal article 2003

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In-plane magnetoconductivity of Si MOSFETs: A quantitative comparison of theory and experiment

Vitkalov, S.A. (author), James, K. (author), Narozhny, B.N. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2003

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Spin-Independent Origin of the Strongly Enhanced Effective Mass in a Dilute 2D Electron System

Shashkin, A.A. (author), Rahimi, M. (author), Anissimova, S. (author), Kravchenko, S.V. (author), Dolgopolov, V.T. (author), Klapwijk, T.M. (author)

journal article 2003

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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer, E.J. (author), Gelinck, G.H. (author), Van Veenendaal, E. (author), Huisman, B.H. (author), De Leeuw, D.M. (author), Klapwijk, T.M. (author)

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we...

journal article 2003