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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...journal article 2008
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Zwanenburg, F.A. (author)The research in this thesis is motivated by an interest in quantum physics and by the prospect of new applications based on the spin of electrons or holes. This work focuses on confining single spins in quantum dots, which can serve as building blocks of a future quantum computer. Such a computer exploits the unique features of quantum mechanics...doctoral thesis 2008
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Weis, C.D. (author), Schuh, A. (author), Batra, A. (author), Persaud, A. (author), Rangelow, I.W. (author), Bokor, J. (author), Lo, C.C. (author), Cabrini, S. (author), Sideras-Haddad, E. (author), Fuchs, G.D. (author), Hanson, R. (author), Awschalom, D.D. (author), Schenkel, T. (author)The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers....journal article 2008
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Pujada, B.R. (author), Tichelaar, F.D. (author), Arnoldbik, W.M. (author), Sloof, W.G. (author), Janssen, G.C.A.M. (author)Growth stress in tungsten carbide-diamond-like carbon coatings, sputter deposited in a reactive argon/acetylene plasma, has been studied as a function of the acetylene partial pressure. Stress and microstructure have been investigated by wafer curvature and transmission electron microscopy (TEM) whereas composition and energy distribution...journal article 2009
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...journal article 2009
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Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...journal article 2009
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Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...journal article 2009
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Sadeghian, H. (author), Yang, C.K. (author), Goosen, J.F.L. (author), Van der Drift, E. (author), Bossche, A. (author), French, P.J. (author), Van Keulen, F. (author)This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young’s Modulus ? ( ~170–70?GPa) of [110] silicon nanocantilevers (thickness ~1019–40?nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems...journal article 2009
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....journal article 2009
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Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...journal article 2009
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On the surface roughness development of hydrogenated amorphous silicon deposited at low growth ratesWank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...journal article 2009
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Brasser, H.J. (author)Silicon (Si) is omnipresent in nature, and it is involved in important but diverse roles in a broad range of organisms, including diatoms, higher plants and humans. Some organisms, like the diatoms, need high amounts of silicon, and master silicon chemistry to a high extend using several enzymes. Other organisms which need silicon as an...doctoral thesis 2009
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Sarubbi, F. (author)Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...doctoral thesis 2010
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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...journal article 2010
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Lansbergen, G.P. (author)-doctoral thesis 2010
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Timonova, M. (author)Although over the past years huge progress has been made in silicon research and silicon can be regarded as one of the best studied chemical elements, even more precise control and understanding of the material is needed as dimensions of electronic elements shrink towards the deep nanolevel. At this scale, experiments are not always sufficient...doctoral thesis 2010
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...journal article 2010
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Westra, J.M. (author), Vavrunkova, V. (author), Sutta, P. (author), Van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will...journal article 2010
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Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....journal article 2010
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Testa, G. (author), Huang, Y. (author), Sarro, P.M. (author), Zeni, L. (author), Bernini, R. (author)The feasibility of an integrated silicon optofluidic ring resonator is demonstrated. Liquid core antiresonant reflecting optical waveguides are used to realize a rectangular ring resonator with a multimode interference liquid core coupler between the ring and the bus waveguide. In this configuration the same waveguide used to confine the light...journal article 2010