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Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping LayersYang, G. (author), Van de Loo, Bas (author), Stodolny, Maciej (author), Limodio, G. (author), Melskens, Jimmy (author), Isabella, O. (author), Weeber, A.W. (author), Zeman, M. (author), Kessels, W. M.M. (author)Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results...journal article 2021