Modeling and optimization of white paint back reflectors for thin-film silicon solar cells

Diffusive dielectric materials such as white paint have been demonstrated as effective back reflectors in the photovoltaic technology. In this work, a one-dimensional (1D) optical modeling approach for simulation of white paint films is developed and implemented in a 1D optical simulator for thin-film solar cells. The parameters of white paint,...

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...

Atomistic models of hydrogenated amorphous silicon nitride from first principles

We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0?g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional...

Modulated surface textures for enhanced light trapping in thin-film silicon solar cells

Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....

Formation of thin-film crystalline silicon on glass observed by in-situ XRD

Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will...

A scattering model for surface-textured thin films

We present a mathematical model that relates the surface morphology of randomly surface-textured thin films with the intensity distribution of scattered light. The model is based on the first order Born approximation [see e.g., M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge University Press, Cambridge, England, 1999) ] and on...

First-principles study of hydrogenated amorphous silicon

We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect of the cooling rate is examined. We prepared a...

Modulated photonic-crystal structures as broadband back reflectors in thin-film solar cells

A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...

Determination of the mobility gap of intrinsic ?c-Si:H in p-i-n solar cells

Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...

Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...