Transparent silicon carbide/tunnel SiO₂ passivation for c-Si solar cell front side: Enabling J_sc > 42 mA/cm² and iV_oc of 742 mV

N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we...

New bearingless generator with buoyant rotor for large direct-drive wind turbines

Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage