Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

In this work, we develop SiO_x/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...