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Zhao, Y. (author), Procel Moya, P.A. (author), Smets, A.H.M. (author), Mazzarella, L. (author), Han, C. (author), Yang, G. (author), Cao, L. (author), Yao, Z. (author), Weeber, A.W. (author), Zeman, M. (author), Isabella, O. (author)
Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation...
journal article 2022
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)
We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...
journal article 2011