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Chaudhary, A. (author), Hoß, Jan (author), Lossen, Jan (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)
We have metallised n+ polysilicon passivated layer structures deposited by Low Pressure Chemical Vapor Deposition (LPCVD) with silver pastes. We analysed recombination at the metal contacts by photoluminescence imaging of metallised lifetime samples and found for the best paste, metal semiconductor recombination current density values (J0met)...
conference paper 2021
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Chaudhary, A. (author), Hos, Jan (author), Lossen, Jan (author), Huster, Frank (author), Kopecek, Radovan (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)
In this article, we investigate the passivation quality and electrical contact properties for samples with a 150 nm thick n+ polysilicon layer in comparison to samples with a phosphorus diffused layer. High level of passivation is achieved for the samples with n+ polysilicon layer and an interfacial oxide underneath it. The contact properties...
journal article 2022
document
Chaudhary, A. (author), Hoß, Jan (author), Lossen, Jan (author), Huster, Frank (author), Kopecek, Radovan (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)
Passivated contact based on a thin interfacial oxide and a highly doped polysilicon layer has emerged as the next evolutionary step to increase the efficiencies of industrial silicon solar cells. To take maximum advantage from this layer stack, it is vital to limit the losses at the metal polysilicon interface, which can be quantified as...
journal article 2022