Transparent silicon carbide/tunnel SiO₂ passivation for c-Si solar cell front side: Enabling J_sc > 42 mA/cm² and iV_oc of 742 mV

N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we...

Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves

The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated...