Device operation of P-ion-implanted n-BaSi₂/p-Si heterojunction solar cells

We formed phosphorous(P)-ion-implanted n-BaSi₂ films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi₂/p-Si heterojunction under AM1.5 illumination. The BaSi₂ films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi₂ films using PF<sub...

Solar cells based on n⁺-AZO/p-BaSi₂ heterojunction: Advanced opto-electrical modelling and experimental demonstration

We performed advanced opto-electrical simulations on thin-film BaSi₂ solar cells. First, absorption spectra of BaSi₂-pn homojunction solar cells on Si substrate were calculated based on flat and/or pyramidally-textured surfaces, wherein 20-nm-thick n⁺-BaSi₂ was the topmost electron transport layer....

Point defects in BaSi₂ thin films for photovoltaic applications studied by positron annihilation spectroscopy

Barium di-silicide (BaSi₂) is a very promising absorber material for high-efficiency thin-film solar cells, due to its suitable bandgap, high light absorption coefficient, and long minority-carrier lifetime. In this study, we compare the nanostructure, layer composition, and point defects of BaSi₂ thin films deposited by...