Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and...

High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Broadband transparent conductive oxide layers with high electron mobility (μ_e) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In₂O₃ thin films with high μ_e (>60 cm² V^-1 s^-1) have been extensively...

Point defects in BaSi₂ thin films for photovoltaic applications studied by positron annihilation spectroscopy

Barium di-silicide (BaSi₂) is a very promising absorber material for high-efficiency thin-film solar cells, due to its suitable bandgap, high light absorption coefficient, and long minority-carrier lifetime. In this study, we compare the nanostructure, layer composition, and point defects of BaSi₂ thin films deposited by...

Toward BaSi₂/Si Heterojunction Thin-Film Solar Cells: Insights into Heterointerface Investigation, Barium Depletion, and Silicide-Mediated Silicon Crystallization

The knowledge of the structural and compositional details of Si/BaSi₂/Si heterostructure annealed at high temperature is a prerequisite for BaSi₂ application in heterojunction thin-film solar cells. For this purpose, Si/BaSi₂/Si heterostructures deposited by magnetron sputtering with different Si layer...

Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells

The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the IWO were manipulated when deposited on top of thin-film silicon...