Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB Ge-on-Si photodiode fabrication by reducing the...

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion...

A Simple Model describing the kinetic of CVD Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism...

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...

Local-Loading Effects for Pure-Boron-Layer Chemical-Vapor Deposition (abstract)

Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD reactor (abstract)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions

The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane (abstract)

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions (abstract)

Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy

The low-energy electron detectors presented in this work have near theoretical electron signal gain at low energies measured down to 200 eV and high-speed response due to the following technological steps: (i) chemical vapor deposition (CVD) of boron layers (PureB layers) proven to form an ideal nm-deep p+n junction with the outstanding...

Issues with transferring PureB CVD from an epitaxial reactor to a furnace system

In order to transfer the CVD process from a singlewafer epitaxial reactor to a batch furnace system, several issues have to be considered. The main process issue is that PureB deposition is highly-selective, depositing only on silicon and not silicon dioxide. Silicon surface has to be free of native oxide and oxidation must be prevented during...

Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies...

Si and SiGe Epitaxy in Perspective

Fifty years of Si and SiGe epitaxy in the semiconductor industry and twenty-five since the conception of the present generation of industrial epi reactors suffice to justify a review of the evolution and the status of the technology. Although there has been very little change in the reactor design, the epi process progressed significantly. The...

Si and SiGe Epitaxy in Perspective