Searched for: department%3A%22Microelectronics%22
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document
Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
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Sammak, A. (author), De Boer, W.B. (author), Nanver, L.K. (author)
conference paper 2012
document
Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
document
Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
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Sakic, A. (author), Nanver, L.K. (author), van Veen, G. (author), Kooijman, K. (author), Vogelsang, P. (author), Scholtes, T.L.M. (author), De Boer, W. (author), Wien, W.H.A. (author), Milosavljevic, S. (author), Heerkens, C. (author), Knezevic, T. (author), Spee, I. (author)
The low-energy electron detectors presented in this work have near theoretical electron signal gain at low energies measured down to 200 eV and high-speed response due to the following technological steps: (i) chemical vapor deposition (CVD) of boron layers (PureB layers) proven to form an ideal nm-deep p+n junction with the outstanding...
conference paper 2011
document
Mok, K.R.C. (author), Nanver, L.K. (author), De Boer, W.D. (author), Vlooswijk, A.H.G. (author)
In order to transfer the CVD process from a singlewafer epitaxial reactor to a batch furnace system, several issues have to be considered. The main process issue is that PureB deposition is highly-selective, depositing only on silicon and not silicon dioxide. Silicon surface has to be free of native oxide and oxidation must be prevented during...
conference paper 2011
Searched for: department%3A%22Microelectronics%22
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