Voltage calibration of BJT-based temperature sensors

Nowadays, the BJT-based temperature sensors have occupied the majority of the market. Due to process spread, BJT-based temperature sensors usually requires calibration. Currently, thermal calibration is the only method. However, it is usually costly and time consuming. In this paper, a new calibration method called voltage calibration is...

An Energy-Efficient Reconfigurable Interface for Resonant Sensors Based On Ring-Down Measurement

This thesis discusses the theory, architecture design, circuit design and measurements of an ultra-low-energy reconfigurable interface circuit for resonant gas sensors. This interface circuit employs a transient measurement method. The resonant sensor is driven at a frequency close to its resonance frequency by an excitation source that is...

Integrated water cooling for HIFU prostate ablation

As a innovation therapy for prostate cancer, HIFU device can heat and destroy tissue rapidly and precisely. In this project, we try to find a suitable way to integrate water cooling in a micro fabricated HIFU device, to remove unwanted heat and ensure proper functionality of the medical device. The water cooling is implemented by etching a...

Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors

The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...

Fabrication of in situ ultrathin anodic aluminum oxide layers for nanostructuring on silicon substrate

The authors demonstrate a method for the fabrication of in situ ultrathin porous anodic aluminum oxide layers (aspect ratio<2:1) on Si, which can be directly used as templates for nanodot preparation and for pattern transfer. The regular shape of the aluminum oxide pores is maintained even when the thickness of the aluminum oxide template is...

Influence of trap states on dynamic properties of single grain silicon thin film transistors

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...

Gate oxide induced switch-on undershoot current observed in thin-film transistors

The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can...