In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates...

Sub-10-nm nanolithography with a scanning helium beam

Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.