Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author) Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...
journal article 2010
