Ultrasmall silicon quantum dots

We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...

Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

We fabricate freely suspended nanosheets of molybdenum disulphide (MoS2) which are characterized by quantitative optical microscopy and high-resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young’s modulus and the initial pretension of the...

Strong and tunable mode coupling in carbon nanotube resonators

The nonlinear interaction between two mechanical resonances of the same freely suspended carbon nanotube resonator is studied. We find that, in the Coulomb-blockade regime, the nonlinear modal interaction is dominated by single-electron-tunneling processes and that the mode-coupling parameter can be tuned with the gate voltage, allowing both...

Probing the charge of a quantum dot with a nanomechanical resonator

We have used the mechanical motion of a carbon nanotube (CNT) as a probe of the average charge on a quantum dot. Variations of the resonance frequency and the quality factor are determined by the change in average charge on the quantum dot during a mechanical oscillation. The average charge, in turn, is influenced by the gate voltage, the bias...

Submicrosecond-timescale readout of carbon nanotube mechanical motion

We report fast readout of the motion of a carbon nanotube mechanical resonator. A close-proximity high electron mobility transistor amplifier is used to increase the bandwidth of the measurement of nanotube displacements from the kHz to the MHz regime. Using an electrical detection scheme with the nanotube acting as a mixer, we detect the...

Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...

High-quality-factor tantalum oxide nanomechanical resonators by laser oxidation of TaSe2

Controlling the strain in two-dimensional (2D) materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here, we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by the laser oxidation of nano-drumhead resonators composed of tantalum...

Quantum transport in carbon nanotubes

Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of...

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...

Silicon nitride membrane resonators at millikelvin temperatures with quality factors exceeding 10^8

We study the mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor (Q) metalized silicon nitride membranes at temperatures down to 14?mK using a three-dimensional optomechanical cavity. Below 200?mK, high-Q modes of the membranes show a diverging increase of Q with decreasing temperature, reaching Q=1.27×108Q=1...

Large cooperativity and microkelvin cooling with a three-dimensional optomechanical cavity

In cavity optomechanics, light is used to control mechanical motion. A central goal of the field is achieving single-photon strong coupling, which would enable the creation of quantum superposition states of motion. Reaching this limit requires significant improvements in optomechanical coupling and cavity coherence. Here we introduce an...

Optomechanical response of a nonlinear mechanical resonator

We investigate theoretically in detail the nonlinear effects in the response of an optical/microwave cavity coupled to a Duffing mechanical resonator. The cavity is driven by a laser at a red or blue mechanical subband, and a probe laser measures the reflection close to the cavity resonance. Under these conditions, we find that the cavity...