Transport through a single donor in p-type silicon

Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...

Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

Understanding the electronic properties of dopants near an interface is a critical challenge for nanoscale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. While dielectric mismatch between the vacuum and the...