Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...

Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...

Spin torque transistor revisited

We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and...

Coherent transport through a double donor system in silicon

In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...

Bias-dependent contact resistance in rubrene single-crystal field-effect transistors

The authors report a systematic study of the bias-dependent contact resistance in rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt electrodes. They show that the reproducibility in the values of contact resistance strongly depends on the metal, ranging from a factor of 2 for Ni to more than three orders of magnitude...

Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes

We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300??m. We find that the contact resistance can be as low as 100???cm with narrowly spread fluctuations. For comparison, we have...

Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3?cm2/V?s in both materials. The highest...

Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene

We report on the fabrication and characterization of field-effect transistors based on single crystals of the organic semiconductor dibenzo-tetrathiafulvalene (DB-TTF). We demonstrate that it is possible to prepare very-good-quality DB-TTF crystals from solution. These devices show high field-effect mobilities typically in the range 0.1–1?cm2/V...

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with...

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we...

Switch-on voltage in disordered organic field-effect transistors

The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate...