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Räsänen, E. (author), Saarikoski, H. (author), Harju, A. (author), Ciorga, M. (author), Sachrajda, A.S. (author)
Two-dimensional semiconductor quantum dots are studied in the filling-factor range 2<v<3. We find both theoretical and experimental evidence of a collective many-body phenomenon, where a fraction of the trapped electrons form an incompressible spin droplet on the highest occupied Landau level. The phenomenon occurs only when the number of...
journal article 2008
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Vandersypen, L.M.K. (author), Elzerman, J.M. (author), Schouten, R.N. (author), Willems van Beveren, L.H. (author), Hanson, R. (author), Kouwenhoven, L.P. (author)
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is...
journal article 2004
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Elzerman, J.M. (author), Hanson, R. (author), Willems van Beveren, L.H. (author), Vandersypen, L.M.K. (author), Kouwenhoven, L.P. (author)
We demonstrate a method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made...
journal article 2004