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Sun, P. (author), Ishihara, R. (author), Charbon, E. (author)We proposed the world’s first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD...journal article 2016
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Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV...patent 2016
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Sun, P. (author), Charbon, E. (author), Ishihara, R. (author)The first single-photon avalanche diode (SPAD) image sensor fully integrated on flexible substrate is reported. The design consists of an array of 1024 quenched pixels with CMOS readout and addressing circuitries. The flexible substrate was made compatible with sol-gel polymer, which will be used to imprint microlenses by quartz mold to improve...conference paper 2015
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Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...journal article 2015
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Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)A method for forming a silicon layer using a liquid silane compound is described wherein said method comprises the steps of forming a first layer on a substrate, preferably a flexible substrate, said first layer comprising a (poly)silane; and, irradiating said first light ight comprising one or more wavelength within the range between 200 and...patent 2014
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Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Shimoda, T. (author), Ishihara, R. (author)Printing is attractive for manufacturing flexible circuits. This manuscript presents our investigation of single-grain Si TFTs fabricated from printed liquid-Si, on a polyimide substrate with the maximum process temperature of 350 °C. The field-effect mobility is 460 cm2/Vs for electrons and 121 cm2/Vs for the holes. CMOS inverters were also...journal article 2014
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Ishihara, R. (author), Van de Zwan, M. (author), Trifunovic, M. (author)Methods for manufacture of a submicron semiconductor structure on a substrate are described. The method may comprise: forming at least one template layer over a support substrate; forming one or more template structures, preferably one or more recesses and/or mesas, in said template layer, said one or more template structures comprising one or...patent 2014
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...journal article 2014
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Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...journal article 2013
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Vollebregt, S. (author), Banerjee, S. (author), Beenakker, K. (author), Ishihara, R. (author)The thermal conductivity of as-grown vertical multi-walled carbon nanotubes (CNT) bundles fabricated at low temperature (500?°C) was measured using a vertical 3?-method. For this, CNT were selectively grown inside an oxide opening and sandwiched between two metal electrodes. The validity of the method was confirmed by both measurements as...journal article 2013
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Fujii, M. (author), Ishikawa, Y. (author), Ishihara, R. (author), Van der Cingel, J. (author), Mofrad, M.R.T. (author), Horita, M. (author), Uraoka, Y. (author)In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis...journal article 2013
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Ishihara, R. (author), Van der Zwan, M. (author)A method for the manufacture of at least part of a thin-film device is described wherein, said method comprise: forming one or more indentations in a substrate, preferably a plastic substrate, an indentation comprising sidewalls and a base; filling at least one of said one or more indentations with a first ink, said first ink comprising a first...patent 2013
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author)Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5?m, and the mobilities for electrons and holes are...journal article 2012
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Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 ?m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.journal article 2012
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- Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author) conference paper 2012
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- Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author) conference paper 2012
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Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...journal article 2011
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Wu, H. (author), Vollebregt, S. (author), Emadi, A. (author), De Graaf, G. (author), Ishihara, R. (author), Wolffenbuttel, R.F. (author)A thermopile based detector array has advantages when used for an infrared (IR) micro-spectrometer, as compared to an array of photon detector, such as flat spectral response and uncooled operation. A thermal detector requires a good absorber to achieve a high absorption coefficient in the spectral range of interest. Several solutions are...journal article 2011
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Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...conference paper 2011
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Ishihara, R. (author), Chen, T. (author), Van der Zwan, M. (author), He, M. (author), Schellevis, H. (author), Beenakker, K. (author)Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...conference paper 2011
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