Patterning of fine-features in nanoporous films synthesized by spark ablation

Advances in semiconductor device manufacturing technologies are enabled by the development and application of novel materials. Especially one class of materials, nanoporous films, became building blocks for a broad range of applications, such as gas sensors and interconnects. Therefore, a versatile fabrication technology is needed to...

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

Towards a Scalable Sun Position Sensor with Monolithic Integration of the 3d Optics for Miniaturized Satellite Attitude Control

In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...

A Wafer-Scale Process for the Monolithic Integration of CVD Graphene and CMOS Logic for Smart MEMS/NEMS Sensors

In this paper we present, for the first time, the successful monolithic wafer-scale integration of CVD graphene with CMOS logic for highly miniaturized smart sensing structures with on-chip readout electronics. The use of a patterned CMOS compatible catalyst for pre-defined regions of CVD graphene growth, and the transfer-free process used,...

A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement...