Design of large-area metasurfaces for the mid-IR and suited for CMOS-compatible fabrication by masked lithography

The use of masked UV (i-line) lithography in a MEMS foundry for CMOS-compatible fabrication of large-area metasurface-based absorbers for the mid-infrared is demonstrated. The challenges are in: (a) the limited number of acceptable metals, (b) the thickness tolerance of the layers used in the CMOS process, and (c) the imaging capabilities of...