PECVD silicon carbide surface micromachining technology and selected MEMS applications

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a...

Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide variety of surface- and thin-SOI...

SOI Digital Accelerometer Based on Pull-in Time Configuration

The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The accelerometer can be directly interfaced to digital...