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van Nijen, D.A. (author), Stevens, Tristan (author), Mercimek, Yavuzhan (author), Yang, G. (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author), Isabella, O. (author), Manganiello, P. (author)Nowadays, an increasing share of photovoltaic (PV) systems makes use of module- or submodule-level power electronics (PE). Furthermore, PE is used in stand-alone devices powered by PV-storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein...journal article 2024
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Yang, G. (author), Gram, Remon (author), Procel Moya, P.A. (author), Han, C. (author), Yao, Z. (author), Singh, M. (author), Zhao, Y. (author), Mazzarella, L. (author), Zeman, M. (author), Isabella, O. (author)Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collection, beside the tunneling mechanism. However, pinholes are usually...journal article 2023
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Chen, N. (author), Tune, Daniel (author), Buchholz, Florian (author), Roescu, Razvan (author), Zeman, M. (author), Isabella, O. (author), Mihailetchi, Valentin D. (author)In this study, the edge passivation effectiveness and long-term stability of Nafion polymer in n-type interdigitated back contact (IBC) solar cells are investigated. For new module technologies such as half-cut, triple-cut, or shingled modules, cutting of the cells introduces unpassivated edges with a high recombination rate and this limits the...journal article 2023
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Chaudhary, A. (author), Hos, Jan (author), Lossen, Jan (author), Huster, Frank (author), Kopecek, Radovan (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)In this article, we investigate the passivation quality and electrical contact properties for samples with a 150 nm thick n+ polysilicon layer in comparison to samples with a phosphorus diffused layer. High level of passivation is achieved for the samples with n+ polysilicon layer and an interfacial oxide underneath it. The contact properties...journal article 2022
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Zhao, Y. (author), Procel Moya, P.A. (author), Smets, A.H.M. (author), Mazzarella, L. (author), Han, C. (author), Yang, G. (author), Cao, L. (author), Yao, Z. (author), Weeber, A.W. (author), Zeman, M. (author), Isabella, O. (author)Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation...journal article 2022
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Chaudhary, A. (author), Hoß, Jan (author), Lossen, Jan (author), Huster, Frank (author), Kopecek, Radovan (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)Passivated contact based on a thin interfacial oxide and a highly doped polysilicon layer has emerged as the next evolutionary step to increase the efficiencies of industrial silicon solar cells. To take maximum advantage from this layer stack, it is vital to limit the losses at the metal polysilicon interface, which can be quantified as...journal article 2022
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Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping LayersYang, G. (author), Van de Loo, Bas (author), Stodolny, Maciej (author), Limodio, G. (author), Melskens, Jimmy (author), Isabella, O. (author), Weeber, A.W. (author), Zeman, M. (author), Kessels, W. M.M. (author)Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results...journal article 2021
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Limodio, G. (author), Yang, G. (author), De Groot, Yvar (author), Procel, Paul (author), Mazzarella, L. (author), Weber, Arthur W. (author), Isabella, O. (author), Zeman, M. (author)In this work, we develop SiO<sub>x</sub>/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...journal article 2020
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Singh, M. (author), Santbergen, R. (author), Mazzarella, L. (author), Madrampazakis, A. (author), Yang, G. (author), Vismara, R. (author), Remes, Z. (author), Weeber, A.W. (author), Zeman, M. (author), Isabella, O. (author)The optical modelling for optimizing high-efficiency c-Si solar cells endowed with poly-SiO<sub>x</sub> or poly-SiC<sub>x</sub> carrier-selective passivating contacts (CSPCs) demands a thorough understanding of their optical properties, especially their absorption coefficient. Due to the mixed phase nature of these CSPCs, spectroscopic...journal article 2020
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Pomaska, Manuel (author), Köhler, Malte (author), Procel Moya, P.A. (author), Zamchiy, Alexandr (author), Singh, Aryak (author), Kim, Do Yun (author), Isabella, O. (author), Zeman, M. (author), Li, Shenghao (author)N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we...journal article 2020
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Han, C. (author), Yang, G. (author), Montes, Ana (author), Procel Moya, P.A. (author), Mazzarella, L. (author), Zhao, Y. (author), Eijt, S.W.H. (author), Schut, H. (author), Zhang, Xiaodan (author), Zeman, M. (author), Isabella, O. (author)In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage...journal article 2020
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Özkol, E. (author), Procel Moya, P.A. (author), Zhao, Y. (author), Mazzarella, L. (author), Medlin, Rostislav (author), Šutta, Pavol (author), Isabella, O. (author), Zeman, M. (author)Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22% efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al<sub>2</sub>O...journal article 2019
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Han, C. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Procel Moya, P.A. (author), Tijssen, M. (author), Bento Montes, A.R. (author), Isabella, O. (author), Zeman, M. (author)Broadband transparent conductive oxide layers with high electron mobility (μ<sub>e</sub>) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In<sub>2</sub>O<sub>3</sub> thin films with high μ<sub>e</sub> (>60 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) have been extensively...journal article 2019
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Limodio, G. (author), Yang, G. (author), Ge, H. (author), Procel Moya, P.A. (author), de Groot, Y. (author), Mazzarella, L. (author), Isabella, O. (author), Zeman, M. (author)In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO<sub>x</sub> hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...journal article 2019
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Limodio, G. (author), D'Herouville, G. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO <sub>3</sub> which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...journal article 2019
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Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...journal article 2019
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Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)In this work we present a theoretical analysis of charge carriers transport mechanisms in IBC-SHJ solar cells. The concepts of contact and transport selectivity are correlated through the band bending at c-Si interface and are used to identify thin-film silicon parameters affecting fill factor (FF) and open-circuit voltage (V<sub>OC</sub>)....journal article 2018
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Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Limodio, G. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...journal article 2018
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Yang, G. (author), Zhang, Y. (author), Procel Moya, P.A. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have...journal article 2017
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Yang, G. (author), Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...journal article 2016
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