Searched for: subject%3A%22Cell%255C%252BBE%22
(1 - 4 of 4)
document
Ten Kate, O.M. (author), De Jong, M. (author), Hintzen, H.T. (author), Van der Kolk, E. (author)
Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge solar cells with and without an integrated...
journal article 2013
document
Kind, R. (author), Van Swaaij, R.A.C.M.M. (author), Rubinelli, F.A. (author), Solntsev, S. (author), Zeman, M. (author)
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...
journal article 2011
document
Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)
A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...
journal article 2009
document
Khan, R.U.A. (author), Silva, S.R.P. (author), Van Swaaij, R.A.C.M.M. (author)
Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in...
journal article 2003
Searched for: subject%3A%22Cell%255C%252BBE%22
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