Searched for: subject%3A%22EUV%22
(1 - 20 of 21)

Pages

List view
Grid view
document
Marinescu, O. (author), Bociort, F. (author)
The merit function space of mirror systems for EUV lithography is studied. Local minima situated in a multidimensional merit function space are connected via links that contain saddle points and form a network. In this work we present the first networks for EUV lithographic objectives and discuss how these networks change when control parameters...
conference paper 2005
document
Marinescu, O. (author), Bociort, F. (author), Braat, J. (author)
When Extreme Ultraviolet mirror systems having several high-order aspheric surfaces are optimized, the configurations often enter into highly unstable regions of the parameter space. Small changes of system parameters lead then to large changes in ray paths, and therefore optimization algorithms crash because certain sssumptions upon which they...
conference paper 2004
document
Soloviev, O. (author), Vdovin, G. (author)
This article presents a prototype of a CMOS phase sensor for high accuracy (1 Angstrom) heterodyne interferometry. Switched integrators realization of a lock-in pixel for 4-bucket phase detection algorithm is described and illustrated by experimental results. Factors that limit the accuracy of this implementation and possible ways for its...
conference paper 2005
document
Marinescu, O. (author), Bociort, F. (author)
Optical designers often insert or split lenses in existing designs. Here, we present, with examples from Deep and Extreme UV lithography, an alternative method that consists of constructing saddle points and obtaining new local minima from them. The method is remarkable simple and can therefore be easily integrated with the traditional design...
conference paper 2006
document
Marinescu, O. (author), Bociort, F. (author)
The multidimensional merit function space of complex optical systems contains a large number of local minima that are connected via links that contain saddle points. In this work, we illustrate a method to construct such saddle points with examples of deep UV objectives and extreme UV mirror systems for lithography. The central idea of our...
conference paper 2005
document
Polo, A. (author), Bociort, F. (author), Pereira, S.F. (author), Urbach, H.P. (author)
Accurate wavefront aberration measurement are essential for next-generation Extreme Ultraviolet (EUV) Lithography. During the past years several accurate interferometric techniques have been developed, but these techniques have limitation. In this work we discuss a different technique based on the Hartmann Wavefront Sensor that requires no...
conference paper
document
Habets, Michel (author), Scholten, Joni (author), Weiland, Siep (author), Coene, W.M.J.M. (author)
The imaging quality of the projection optics of an extreme ultraviolet lithography scanner degrades under the influence of thermally induced deformations of its mirrors. Wavefronts of different reticle points encounter different parts of the deformed mirrors, resulting in a field dependent wavefront error. This paper presents how ideas from...
conference paper 2016
document
Ansuinelli, P. (author), Coene, W.M.J.M. (author), Urbach, Paul (author)
EUV lithography is the main candidate for patterning of future technology nodes. Its successful implementation depends on many aspects, among which the availability of actinic mask metrology tools able to inspect the patterned absorber in order to control and monitor the lithographic process. In this work, we perform a simulation study to...
conference paper 2019
document
Ernst, M.A. (author)
To ensure a continuing miniaturization in the semiconductor industry, new technologies need to be developed to define ever smaller patterns on the silicon substrates. One of these emerging technologies is extreme ultraviolet (EUV) lithography. Unfortunately, EUV light causes oxidation of the optical components inside the lithography machine that...
doctoral thesis 2009
document
Nugrowati, A.M. (author)
In this thesis, we present applications in optics involving the diffraction theory of light for two advanced technologies. We have used a rigorous vectorial diffraction method to model: (i) the imaging of mask structures in extreme ultraviolet lithography, and (ii) ultrashort pulse propagation through small apertures. We have explained the...
doctoral thesis 2008
document
Saathof, R. (author)
In highly precise systems the thermal expansion of system-parts is of increasing concern, since it can severely compromise its performance at sub-nanometre level. An example of such a system is an Extreme UltraViolet (EUV)-lithography machine that is used in the semi-conductor industry to project the pattern of the chip onto a silicon wafer. In...
doctoral thesis 2013
document
Sarubbi, F. (author)
Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...
doctoral thesis 2010
document
Meskers, A.J.H. (author)
Lithographic exposure equipment for integrated circuit manufacturing requires ever more accurate position measurement systems, which is currently led by the advent of Extreme UltraViolet (EUV)-lithography machines. This PhD-research describes an interferometric displacement measurement system that possess the potential to foresee in the need for...
doctoral thesis 2014
document
Ansuinelli, P. (author)
The importance of inverse problems is paramount in science and physics because their solution provides information about parameters that cannot be directly observed. This thesis discusses and details the application of a few inverse methods in optical imaging, metrology and inspection of lithographic targets, particularly patterned structures on...
doctoral thesis 2022
document
Marinescu, O. (author), Bociort, F. (author)
journal article 2008
document
Marinescu, O. (author), Bociort, F. (author)
journal article 2008
document
Lugier, Olivier (author), Troglia, Alessandro (author), Sadegh, Najmeh (author), van Kessel, L.C.P.M. (author), Bliem, Roland (author), Mahne, Nicola (author), Nannarone, Stefano (author), Castellanos, Sonia (author)
The semiconductor industry plans to keep fabricating integrated circuits, progressively decreasing there features size, by employing extreme ultraviolet lithography (EUVL). With this method, new designs and concepts for photoresist materials need to be conceived. In this work, we explore an alternative concept to the classic photoresist...
journal article 2020
document
van Mierlo, Martin (author)
The production of Extreme UltraViolet (EUV) light requires a high power CO2 laser which fires upon droplets of tin. The focus of this thesis shall lie in two aspects of this process: the heat load resulting from the high power and the contamination resulting from the rapid phase change of the droplets. The wavefront of the laser suffers...
master thesis 2019
document
Kleer, Robbert (author)
As the world becomes more connected, smarter, and more eco-friendly, computer microchips represent both the limitation and the heart of the process. To keep up with this growth, ASML creates machines that areable to produce computer-chips that are increasingly powerful & energy efficient. State of the art machines are converting CO2 laser...
master thesis 2020
document
Dekker, Levi (author)
In this thesis, a ground structure based thermofluid topology optimization (TO) method is presented which is applicable to problems with creeping flow. Fluid channels with creeping flow are found in a variety of engineering applications, primarily in the field of microfluidics. Current fluid channel TO is typically done with density-based TO and...
master thesis 2021
Searched for: subject%3A%22EUV%22
(1 - 20 of 21)

Pages

List view
Grid view