Verification of the non-local avalanche current model in mextram for advanced SiGe HBTs

To realize optimum performance, SiGe HBTs are typically designed with heavily doped implanted collectors. For practical circuits operating at either high collector current density (Jc) or high collector-base voltage (Vcb) avalanche multiplication is an important effects that must be accurately measured and modeled. For example in digital...

A Scalable Mextram Model for Advanced Bipolar Circuit Design

In this thesis, a referenced based scaling approach and its parameter extraction for the bipolar transistor model Mextram is proposed. It is mainly based on the physical properties of the Mextram parameters, which scale with the junction temperature and geometry of the bipolar transistor. The scalable electrical parameter in the scaling rules is...