Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Good-quality ultrashallow n + p junctions are formed using 5-keV amorphizing As+ implantations followed by a single-shot excimer laser anneal for dopant activation. By using an implant that is self-aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation...

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of ...