Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Biasotto, C.; Gonda, V.; Nanver, L.K.; Scholtes, T.L.M.; Van der Cingel, J.; Vidal, D.; Jovanovic, V.

doi:doi:10.1007/s11664-011-1734-6

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Title

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Author

Biasotto, C.
Gonda, V.
Nanver, L.K.
Scholtes, T.L.M.
Van der Cingel, J.
Vidal, D.
Jovanovic, V.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Date

2011-08-09

Abstract

Good-quality ultrashallow n + p junctions are formed using 5-keV amorphizing As+ implantations followed by a single-shot excimer laser anneal for dopant activation. By using an implant that is self-aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation processing temperatures kept below 400°C. A possible source of junction leakage at the perimeter caused by dip-etch enlargement of the contact window, also confirmed by transmission electron microscopy (TEM) analysis, is identified, and diode performance is improved by increasing the junction/contact window overlap. The optimum performance in terms of low leakage, shallow junctions, and low resistivity is achieved for 30° tilted implants and by applying a thin laser-reflective aluminum layer. This work isolates the minimum requirements for achieving low-leakage diode characteristics.

Subject

excimer laser annealing
ultrashallow junctions
tilted implantations
low-temperature processing
reflective masking layer

To reference this document use:

http://resolver.tudelft.nl/uuid:4c829c27-4d14-4731-830c-3ec40afbde76

DOI

https://doi.org/10.1007/s11664-011-1734-6

Publisher

Springer

ISSN

0361-5235

Source

http://www.springerlink.com/content/9205q6v151261127/