Searched for: subject%3A%22Silicon%22
(1 - 7 of 7)
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Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...
journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...
journal article 2022
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Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...
conference paper 2021
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Mo, J. (author), Middelburg, L.M. (author), Morana, B. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Zhang, Kouchi (author)
The application of pressure sensors in harsh environments is typically hindered by the stability of the material over long periods of time. This work focuses on the design and fabrication of surface micromachined Pirani gauges which are designed to be compatible with state-of-the-art Silicon Carbide CMOS technology. Such an integrated...
journal article 2021
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Middelburg, L.M. (author)
doctoral thesis 2020
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Middelburg, L.M. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Morana, B. (author), Zhang, Kouchi (author)
This work focusses on the design and fabrication of surface micromachined pressure sensors, designed in a modular way for the integration with analog front-end read-out electronics. Polycrystalline 3C silicon carbide (SiC) was used to fabricate free-standing high topography cavities exploiting surface micromaching. The poly-SiC was in-situ...
journal article 2020
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Middelburg, L.M. (author), Ghaderi, Mohammadamir (author), Bilby, David (author), Visser, Jaco H. (author), Zhang, Kouchi (author), Lundgren, Per (author), Enoksson, Peter (author), Wolffenbuttel, R.F. (author)
Ensuring optical transparency over a wide spectral range of a window with a view into the tailpipe of the combustion engine, while it is exposed to the harsh environment of sootcontaining exhaust gas, is an essential pre-requisite for introducing optical techniques for long-term monitoring of automotive emissions. Therefore, a regenerable...
journal article 2020
Searched for: subject%3A%22Silicon%22
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