Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

Performance Evaluation of an Electric Vehicle Traction Drive using Si/SiC Hybrid Switches

The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to...

Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the...

Improved light trapping in microcrystalline silicon solar cells by plasmonic back reflector with broad angular scattering and low parasitic absorption

We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...