Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies

To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

Introducing a comprehensive physics-based modelling framework for tandem and other PV systems

We introduce a novel simulation tool capable of calculating the energy yield of a PV system based on its fundamental material properties and using self-consistent models. Thus, our simulation model can operate without measurements of a PV device. It combines wave and ray optics and a dedicated semiconductor simulation to model the...

Study of n-type Amorphous Silicon Alloy as the Anode in Li-ion Batteries

In recent years, the world has witnessed a dramatic advancement in sustainable energy development. Due to the inconsistent supply of such energy, a more efficient energy storage method is in need. Among many options, lithium-ion battery stands out due to its lightweight, high energy density, and high discharge potential. Currently, the most...

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100...

Bonding between silicones and thermoplastics using 3D printed mechanical interlocking

Silicones have desirable properties such as skin-safety, high temperature-resistance, and flexibility. Many applications require the presence of a hard body connected to the silicone. Traditionally, it has been difficult to create strong bonding between silicones and hard materials. In this study, a technique is presented to control the...

High moisture accelerated mechanical behavior degradation of phosphor/silicone composites used in white light-emitting diodes

In a high-power white light emitting diode (LED) package, the phosphor/silicone composite is typically used for photometric and colorimetric conversions, ultimately producing the white light. However, the phosphor/silicone composite is always exposed under harsh environments with high temperature, high blue light irradiation and high moisture...

Characterization of PCB Embedded Package Materials for SiC MOSFETs

In this paper, a novel fan-out panel-level printed circuit board (PCB) embedded package technology for silicon carbide (SiC) MOSFET power module is presented to address parasitic inductances, heat dissipation, and reliability issues that are inherent with aluminum wires used in conventional packaging scheme. To withstand high temperature...

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...

Decoupled textures for broadband absorption enhancement beyond Lambertian light trapping limit in thin-film silicon-based solar cells

We present a modelling study of thin silicon based solar cells endowed with periodic and decoupled front/back textures. After careful optimization, the proposed device models exhibit absorption beyond the Lambertian light trapping limit for a wide range of light angles of incidence. The advanced light management scheme is applied to (nano...